High-frequency properties of a graphene nanoribbon field-effect transistor
نویسندگان
چکیده
منابع مشابه
Graphene nanoribbon field-effect transistor at high bias
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, c...
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The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked tr...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2008
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3029715